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| GP201MHS18 GP201MHS18 Low VCE(SAT) Half Bridge IGBT Module DS5290-2.1 January 2001 FEATURES s s s s s Low VCE(SAT) Non Punch Through Silicon Isolated Copper Baseplate Low Inductance Internal Construction 200A Per Arm KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 2.6V 200A 400A APPLICATIONS s s s s 11(C2) 1(E1C2) 2(E2) 6(G2) 7(E2) 3(C1) 5(E1) 4(G1) High Reliability Inverters Motor Controllers Traction Drives Resonant Converters 9(C1) The Powerline range of high power modules includes half bridge, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 4800A. The GP201MHS18 is a half bridge 1800V, n channel enhancement mode, insulated gate bipolar transistor (IGBT) module. Designed with low VCE(SAT) to minimise conduction losses, the module is of particular relevance in low to medium frequency applications. The IGBT has a wide reverse bias safe operating area (RBSOA) ensuring reliability in demanding applications. The module incorporates an electrically isolated base plate and low inductance construction enabling circuit designers to optimise circuit layouts and utilise earthed heat sinks for safety. 11 10 8 9 Fig. 1 Half bridge circuit diagram 1 2 3 6 7 5 4 ORDERING INFORMATION Order As: GP201MHS18 Note: When ordering, please use the complete part number. Outline type code: M (See package details for further information) Fig. 2 Electrical connections - (not to scale) Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 1/10 www.dynexsemi.com GP201MHS18 ABSOLUTE MAXIMUM RATINGS - PER ARM Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability. Tcase = 25C unless stated otherwise Symbol VCES VGES IC IC(PK) Pmax Visol Parameter Collector-emitter voltage Gate-emitter voltage Collector current Peak collector current Max. transistor power dissipation Isolation voltage DC, Tcase = 80C for Tj = 125C 1ms, Tcase = 120C Tcase = 25C, Tj = 150C Commoned terminals to base plate. AC RMS, 1 min, 50Hz VGE = 0V Test Conditions Max. 1800 20 200 400 1500 4000 Units V V A A W V THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Parameter Thermal resistance - transistor (per arm) Test Conditions Continuous dissipation junction to case Rth(j-c) Thermal resistance - diode (per arm) Continuous dissipation junction to case Rth(c-h) Thermal resistance - case to heatsink (per module) Mounting torque 5Nm (with mounting grease) Tj Junction temperature Transistor Diode Tstg Storage temperature range Screw torque Mounting - M6 -40 150 125 125 5 C C C Nm 15 C/kW 160 C/kW Min. Max. 84 Units C/kW 2/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP201MHS18 ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise. Symbol ICES Parameter Collector cut-off current Test Conditions VGE = 0V, VCE = VCES VGE = 0V, VCE = VCES, Tcase = 125C IGES VGE(TH) VCE(sat) Gate leakage current Gate threshold voltage Collector-emitter saturation voltage VGE = 20V, VCE = 0V IC = 10mA, VGE = VCE VGE = 15V, IC = 200A VGE = 15V, IC = 200A, Tcase = 125C IF IFM VF Diode forward current Diode maximum forward current Diode forward voltage DC tp = 1ms IF = 200A IF = 200A, Tcase = 125C Cies LM Input capacitance Module inductance VCE = 25V, VGE = 0V, f = 1MHz Min. 4.5 Typ. 5.5 2.6 3.3 2.2 2.3 25 30 Max. 1 7 1 6.5 3.2 4 200 400 2.5 2.6 Units mA mA A V V V A A V V nF nH Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 3/10 www.dynexsemi.com GP201MHS18 ELECTRICAL CHARACTERISTICS Tcase = 25C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge IF = 200A, VR = 50% VCES, dIF/dt = 2500A/s Test Conditions IC = 200A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 4.7 L ~ 100nH Min. Typ. 500 250 90 450 90 70 50 Max. 650 350 180 600 120 100 80 Units ns ns mJ ns ns mJ C Tcase = 125C unless stated otherwise Symbol td(off) tf EOFF td(on) tr EON Qrr Parameter Turn-off delay time Fall time Turn-off energy loss Turn-on delay time Rise time Turn-on energy loss Diode reverse recovery charge IF = 200A, VR = 50% VCES, dIF/dt = 2000A/s Test Conditions IC = 200A VGE = 15V VCE = 900V RG(ON) = RG(OFF) = 4.7 L ~ 100nH Min. Typ. 600 350 130 540 100 120 80 Max. 800 450 200 700 130 150 110 Units ns ns mJ ns ns mJ C 4/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP201MHS18 TYPICAL CHARACTERISTICS Vge = 20/15/12/10V 400 350 300 Collector current, Ic - (A) Vge = 20/15/12/10V 400 Common emitter Tcase = 125C Common emitter Tcase = 25C 350 300 Collector current, Ic - (A) 250 200 150 100 50 0 0 250 200 150 100 50 0 0 1.0 2.0 3.0 4.0 Collector-emitter voltage, Vce - (V) 5.0 1.0 2.0 3.0 4.0 5.0 Collector-emitter voltage, Vce - (V) 6.0 Fig. 3 Typical output characteristics Fig. 4 Typical output characteristics 180 160 140 120 100 80 60 40 20 0 0 A: Rg = 10 B: Rg = 6.2 C: Rg = 4.7 20 40 60 80 100 120 140 160 180 200 Collector current, IC - (A) C Tcase = 125C VGE = 15V VCE = 900V 160 140 A 120 Tcase = 125C VGE = 15V VCE = 900V A B C Turn-off energy, EOFF - (mJ) Turn-on energy, EON - (mJ) B 100 80 60 40 20 0 0 A: Rg = 10 B: Rg = 6.2 C: Rg = 4.7 20 40 60 80 100 120 140 Collector current, IC - (A) 160 180 200 Fig. 5 Typical turn-on energy vs collector current Fig. 6 Typical turn-off energy vs collector current Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 5/10 www.dynexsemi.com GP201MHS18 50 45 VGE = 15V VCE = 900V Tcase = 125C 600 td(off) 500 td(on) Tcase = 125C VGE = 15V VCE = 900V Rg = 4.7 Diode turn-off energy, Eoff(diode) - (mJ) 40 35 Switching times, ts - (ns) Tcase = 25C 30 25 20 15 10 400 300 tf 200 100 tr 5 0 0 25 50 75 100 125 150 175 200 Collector current, IT - (A) 0 0 20 40 60 80 100 120 140 160 Collector current, IC - (A) 180 200 Fig. 7 Typical diode turn-off energy vs collector current Fig. 7 Typical diode reverse recovery charge vs collector current 400 350 Tj = 25C 300 Foward current, IF - (A) 500 450 400 Collector current, IC - (A) 350 300 250 200 150 100 Tcase = 125C Vge = 15V Rg(min) = 4.7 Rg(min) : Minimum recommended value 250 Tj = 125C 200 150 100 50 0 0 50 0 0 0.5 2.0 1.0 1.5 2.5 Foward voltage, VF - (V) 3.0 3.5 1200 400 800 1600 Collector-emitter voltage, Vce - (V) 2000 Fig. 9 Diode typical forward characteristics Fig. 10 Reverse bias safe operating area 6/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP201MHS18 1000 IC max. (single pulse) 1000 Transient thermal impedance, Zth (j-c) - (C/kW ) Diode Collector current, IC - (A) 100 100 Transistor IC m .D ax C on (c 50s 100s 10 10 u tin ou s) tp = 1ms 1 1 10 100 1000 Collector-emitter voltage, Vce - (V) 10000 1 0.001 0.01 0.1 Pulse width, tp - (s) 1 10 Fig. 11 Forward bias safe operating area Fig. 12 Transient thermal impedance 350 300 PWM Sine Wave Power Factor = 0.9, Modulation Index =1 350 300 Inverter phase current, IC(PK) - (A) DC collector current, IC - (A) 250 250 200 200 150 150 100 Conditions: Tj = 125C, Tcase = 75C Rg = 4.7, VCC = 900V 1 fmax - (kHz) 10 20 100 50 50 0 0 0 20 40 60 80 100 120 Case temperature, Tcase - (C) 140 160 Fig. 13 3 Phase inverter operating frequency Fig. 14 DC current rating vs case temperature Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 7/10 www.dynexsemi.com GP201MHS18 PACKAGE DETAILS For further package information, please visit our website or contact your nearest Customer Service Centre. All dimensions in mm, unless stated otherwise. DO NOT SCALE. 28 0.5 28 0.5 11 6 62 0.8 48 0.3 10 1 2 3 7 4x Fast on tabs 8 9 5 4 93 0.3 3x M6 8 38max 23 106 0.8 108 0.8 Nominal weight: 270g Recommeded fixings for mounting: M6 Recommended mounting torque: 5Nm (44lbs.ins) Recommended torque for electrical connections (M6): 5Nm (44lbs.ins) Module outline type code: M 8/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com GP201MHS18 ASSOCIATED PUBLICATIONS Title Electrostatic handling precautions An introduction to IGBTs IGBT ratings and characteristics Heatsink requirements for IGBT modules Calculating the junction temperature of power semiconductors Gate drive considerations to maximise IGBT efficiency Parallel operation of IGBTs - punch through vs non-punch through characteristics Guidance notes for formulating technical enquiries Principle of rating parallel connected IGBT modules Short circuit withstand capability in IGBTs Driving Dynex Semincoductor IGBT modules with Concept gate drivers Application Note Number AN4502 AN4503 AN4504 AN4505 AN4506 AN4507 AN4508 AN4869 AN5000 AN5167 AN5384 POWER ASSEMBLY CAPABILITY The Power Assembly group was set up to provide a support service for those customers requiring more than the basic semiconductor, and has developed a flexible range of heatsink and clamping systems in line with advances in device voltages and current capability of our semiconductors. We offer an extensive range of air and liquid cooled assemblies covering the full range of circuit designs in general use today. The Assembly group continues to offer high quality engineering support dedicated to designing new units to satisfy the growing needs of our customers. Using the latest CAD methods our team of design and applications engineers aim to provide the Power Assembly Complete Solution (PACs). HEATSINKS The Power Assembly group has its own proprietary range of extruded aluminium heatsinks. They have been designed to optimise the performance of Dynex semiconductors. Data with respect to air natural, forced air and liquid cooling (with flow rates) is available on request. For further information on device clamps, heatsinks and assemblies, please contact your nearest sales representative or customer service office. Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. 9/10 www.dynexsemi.com GP201MHS18 http://www.dynexsemi.com e-mail: power_solutions@dynexsemi.com HEADQUARTERS OPERATIONS DYNEX SEMICONDUCTOR LTD Doddington Road, Lincoln. Lincolnshire. LN6 3LF. United Kingdom. Tel: 00-44-(0)1522-500500 Fax: 00-44-(0)1522-500550 DYNEX POWER INC. 99 Bank Street, Suite 410, Ottawa, Ontarion, Canada, K1P 6B9 Tel: 613.723.7035 Fax: 613.723.1518 Toll Free: 1.888.33.DYNEX (39639) CUSTOMER SERVICE CENTRES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: 011-800-5554-5554. Fax: 011-800-5444-5444 UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 SALES OFFICES Central Europe Tel: +33 (0)1 58 04 91 00. Fax: +33 (0)1 46 38 51 33 North America Tel: (613) 723-7035. Fax: (613) 723-1518. Toll Free: 1.888.33.DYNEX (39639) / Tel: (949) 733-3005. Fax: (949) 733-2986. UK, Scandinavia & Rest Of World Tel: +44 (0)1522 500500. Fax: +44 (0)1522 500020 These offices are supported by Representatives and Distributors in many countries world-wide. (c) Dynex Semiconductor 2001 Publication No. DS5290-3 Issue No. 3.1 January 2001 TECHNICAL DOCUMENTATION - NOT FOR RESALE. PRINTED IN UNITED KINGDOM Datasheet Annotations: Dynex Semiconductor annotate datasheets in the top right hard corner of the front page, to indicate product status. The annotations are as follows:Target Information: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. Preliminary Information: The product is in design and development. The datasheet represents the product as it is understood but details may change. Advance Information: The product design is complete and final characterisation for volume production is well in hand. No Annotation: The product parameters are fixed and the product is available to datasheet specification. This publication is issued to provide information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose nor form part of any order or contract nor to be regarded as a representation relating to the products or services concerned. No warranty or guarantee express or implied is made regarding the capability, performance or suitability of any product or service. The Company reserves the right to alter without prior notice the specification, design or price of any product or service. Information concerning possible methods of use is provided as a guide only and does not constitute any guarantee that such methods of use will be satisfactory in a specific piece of equipment. It is the user's responsibility to fully determine the performance and suitability of any equipment using such information and to ensure that any publication or data used is up to date and has not been superseded. These products are not suitable for use in any medical products whose failure to perform may result in significant injury or death to the user. All products and materials are sold and services provided subject to the Company's conditions of sale, which are available on request. All brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. 10/10 Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures. www.dynexsemi.com |
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